New Patent Granted – March 6th 2018
US 9,911,594: Selective atomic layer deposition process utilizing patterned SAM for 3D structure application
US 9,911,594: Selective atomic layer deposition process utilizing patterned SAM for 3D structure application
US 9,777,378: Advanced Process flow for High Quality FCVD films
US 9,767,987: Method and System for Modifying Substrate Relief Feature using Ion Implantation,
US 9,754,791: Selective Deposition Utilizing Mask and Directional Plasma Treatment
US 9,748,148: Localized Stress Modulation for Overlay and EPE
US 9,733,579: Tooling Configuration for Electric/Magnetic Field Guided Acid Profile Control in PhotoResist Layer
"US 9,716,005: Plasma Poisoning to Enable Selective Deposition"
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