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Patent Applications

Patent ApplicationsStaff2021-01-31T20:45:05-05:00
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  • Application Technology [A]
  • Hardware Technology [A]
  • Plasma Processing [A]
Staff2021-02-02T09:57:01-05:00

US 20130052810: Engineering of Porous Coatings Formed by Ion–Assisted Direct Deposition

Staff2021-02-01T13:25:37-05:00

US 20130045339: Techniques for Diamond Nucleation Control for Thin Film Processing

Staff2021-02-02T11:05:56-05:00

US 20120309180: Method of Forming a Retrograde Material Profile Using Ion Implantation

Staff2021-02-02T10:42:01-05:00

US 20120295444: Techniques for Forming 3D Structures

Staff2021-02-01T13:21:04-05:00

US 20120288637: Method of Affecting Material Proprieties and Applications

Staff2021-02-02T10:46:28-05:00

US 20120263887: Technique and Apparatus for Ion-Assisted Atomic Layer Deposition

Staff2021-02-02T09:50:37-05:00

US 20120258583: Method for Epitaxial Layer Overgrowth

Staff2021-02-02T10:30:19-05:00

US 20120213941: Ion-assisted Plasma Treatment of a Three-dimensional Structure

Staff2021-02-01T13:12:39-05:00

US 20120137971: Hydrophobic Propriety Alteration using Ion Implantation

Staff2021-02-02T09:51:43-05:00

US 20120000421: Control Apparatus for Plasma Immersion Ion Implantation of Dielectric Substrate

Staff2021-02-02T11:15:40-05:00

US 20110309049: Techniques for Plasma Processing a Substrate

Staff2021-02-02T11:01:55-05:00

US 20110300696: Method for Damage-Free Junction Formation

Staff2021-02-02T11:19:38-05:00

US 20110253902: Molecular Ion Generation

Staff2021-02-02T09:51:03-05:00

US 20110039034: Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material

Staff2021-02-02T15:32:52-05:00

US 20100255683: Plasma Processing Apparatus

Staff2021-02-02T11:11:27-05:00

US 20100084583: Reduced Implant Voltage During Ion Implantation

Staff2021-02-01T13:03:27-05:00

US 20090124065: Particle Beam Assisted Modification Of Thin Film Materials

Staff2021-02-01T12:56:54-05:00

US 20090124064: Particle Beam Assisted Modification Of Thin Film Materials

Staff2021-02-02T15:24:32-05:00

US 20090084987: Charge Neutralization In a Plasma Processing Apparatus

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    Ludovic Godet

    LUDOVIC GODET

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